STP55NE06 STP55NE06fp n - channel enhancement mode " single feature size ? " power mosfet n typical r ds(on) = 0.019 w n exceptional dv/dt capability n 100% avalanche tested n low gate charge 100 o c n high dv/dt capability n application oriented characterization description this power mosfet is the latest development of sgs-thomson unique "single feature size" strip-based process. the resulting transistor shows extremely high packing density for low on- resistance, rugged avalance characteristics and less critical alignment steps therefore a remark- able manufacturing reproducibility. applications n dc motor control n dc-dc & dc-ac converters n synchronous rectification internal schematic diagram absolute maximum ratings symbol parameter value unit STP55NE06 STP55NE06fp v ds drain-source voltage (v gs = 0) 60 v v dgr drain- gate voltage (r gs = 20 k w ) 60 v v gs gate-source voltage 20 v i d drain current (continuous) at t c = 25 o c5530a i d drain current (continuous) at t c = 100 o c3921a i dm ( ) drain current (pulsed) 220 220 a p tot total dissipation at t c = 25 o c13035w derating factor 0.96 0.27 w/ o c v iso insulation withstand voltage (dc) ? 2000 v dv/dt peak diode recovery voltage slope 7 v/ns t stg storage temperature -65 to 175 o c t j max. operating junction temperature 175 o c ( ) pulse width limited by safe operating area ( 1 ) i sd 55 a, di/dt 300 a/ m s, v dd v (br)dss , t j t jmax type v dss r ds(on) i d STP55NE06 STP55NE06fp 60 v 60 v < 0.022 w < 0.022 w 55 a 30 a january 1998 to-220 to-220fp 1 2 3 1 2 3 1/9
thermal data to-220 to-220fp r thj-case thermal resistance junction-case max 1.15 4.28 o c/w r thj-amb r thc-sink t l thermal resistance junction-ambient max thermal resistance case-sink typ maximum lead temperature for soldering purpose 62.5 0.5 300 o c/w o c/w o c avalanche characteristics symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max, d < 1%) 55 a e as single pulse avalanche energy (starting t j = 25 o c, i d = i ar , v dd = 25 v) 200 mj electrical characteristics (t case = 25 o c unless otherwise specified) off symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 m a v gs = 0 60 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating t c = 125 o c 1 10 m a m a i gss gate-body leakage current (v ds = 0) v gs = 20 v 100 na on ( * ) symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs i d = 250 m a 234v r ds(on) static drain-source on resistance v gs = 10v i d = 27.5 a 0.019 0.022 w i d(on) on state drain current v ds > i d(on) x r ds(on)max v gs = 10 v 55 a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * ) forward transconductance v ds > i d(on) x r ds(on)max i d =27.5 a 25 35 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25 v f = 1 mhz v gs = 0 3050 380 100 4000 500 130 pf pf pf STP55NE06/fp 2/9
electrical characteristics (continued) switching on symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on time rise time v dd = 30 v i d = 27.5 a r g =4.7 w v gs = 10 v (see test circuit, figure 3) 30 120 40 160 ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 48 v i d = 55 a v gs = 10 v 80 13 25 105 nc nc nc switching off symbol parameter test conditions min. typ. max. unit t r(voff) t f t c off-voltage rise time fall time cross-over time v dd = 48 v i d = 55 a r g =4.7 w v gs = 10 v (see test circuit, figure 5) 20 50 75 30 70 100 ns ns ns source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm ( ) source-drain current source-drain current (pulsed) 55 220 a a v sd ( * ) forward on voltage i sd = 60 a v gs = 0 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 55 a di/dt = 100 a/ m s v dd = 30 v t j = 150 o c (see test circuit, figure 5) 110 430 7.5 ns m c a ( * ) pulsed: pulse duration = 300 m s, duty cycle 1.5 % ( ) pulse width limited by safe operating area safe operating area for to-220 safe operating area for to-220fp STP55NE06/fp 3/9
thermal impedance for to-220 output characteristics transconductance thermal impedance forto-220fp transfer characteristics static drain-source on resistance STP55NE06/fp 4/9
gate charge vs gate-source voltage normalized gate threshold voltage vs temperature source-drain diode forward characteristics capacitance variations normalized on resistance vs temperature STP55NE06/fp 5/9
fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuits for resistive load fig. 2: unclamped inductive waveform fig. 4: gate charge test circuit fig. 5: test circuit for inductive load switching and diode recovery times STP55NE06/fp 6/9
dim. mm inch min. typ. max. min. typ. max. a 4.40 4.60 0.173 0.181 c 1.23 1.32 0.048 0.051 d 2.40 2.72 0.094 0.107 d1 1.27 0.050 e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.067 f2 1.14 1.70 0.044 0.067 g 4.95 5.15 0.194 0.203 g1 2.4 2.7 0.094 0.106 h2 10.0 10.40 0.393 0.409 l2 16.4 0.645 l4 13.0 14.0 0.511 0.551 l5 2.65 2.95 0.104 0.116 l6 15.25 15.75 0.600 0.620 l7 6.2 6.6 0.244 0.260 l9 3.5 3.93 0.137 0.154 dia. 3.75 3.85 0.147 0.151 l6 a c d e d1 f g l7 l2 dia. f1 l5 l4 h2 l9 f2 g1 to-220 mechanical data p011c STP55NE06/fp 7/9
dim. mm inch min. typ. max. min. typ. max. a 4.4 4.6 0.173 0.181 b 2.5 2.7 0.098 0.106 d 2.5 2.75 0.098 0.108 e 0.45 0.7 0.017 0.027 f 0.75 1 0.030 0.039 f1 1.15 1.7 0.045 0.067 f2 1.15 1.7 0.045 0.067 g 4.95 5.2 0.195 0.204 g1 2.4 2.7 0.094 0.106 h 10 10.4 0.393 0.409 l2 16 0.630 l3 28.6 30.6 1.126 1.204 l4 9.8 10.6 0.385 0.417 l6 15.9 16.4 0.626 0.645 l7 9 9.3 0.354 0.366 ? 3 3.2 0.118 0.126 l2 a b d e h g l6 f l3 g1 123 f2 f1 l7 l4 to-220fp mechanical data STP55NE06/fp 8/9
information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-thomson microelectronics. specification s mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously s upplied. sgs-thomson microelectronics products are not authorized for use as critical components in life support devices or systems with out express written approval of sgs-thomson microelectonics. ? 1997 sgs-thomson microelectronics - printed in italy - all rights reserved sgs-thomson microelectronics group of companies australia - brazil - canada - china - france - germany - italy - japan - korea - malaysia - malta - morocco - the netherlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a . . . STP55NE06/fp 9/9
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